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UPA2200T1M

Part Number	UPA2200T1M
Manufacturer	Renesas
Description	N-CHANNEL MOS FET
Published	Aug 3, 2015
Detailed Description	DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2200T1M N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2200T1M is N-cha...
Datasheet	UPA2200T1M PDF File

Overview

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2200T1M N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2200T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.
FEATURES • Low on-state resistance RDS(on)1 = 23 mΩ MAX.
(VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX.
(VGS = 4.
5 V, ID = 4 A) • Built-in gate protection diode • 4.
5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2200T1M-T1-AT Note μ PA2200T1M-T2-AT Note 8 mm embossed taping 8-pin VSOF (1629) 3000 p/reel 0.
011 g TYP.
Note Pb-free (This product does not contain Pb in external electrode and other parts.
) 0.
225±0.
1 PACKAGE DRAWING (Unit: mm) 2.
9±0.
1 0.
65 8 5 A 0.
145±0.
05 0 to 0.
025 1.
9±0.
1 1.
6±0.
1 1 0.
32±0.
05 4 0.
05 M S A 0.
8±0.
05 S 0.
05 S 1, 2, 3, 6, 7, 8: Drain 4 : Gate 5 : Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.
) Drain to Source Voltage (VGS = 0 V) VDSS 30 V G...

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UPA2200T1M N-CHANNEL MOS FET - Renesas

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