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UPA2821T1L

Renesas
Part Number UPA2821T1L
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
Published Aug 3, 2015
Detailed Description μPA2821T1L MOS FIELD EFFECT TRANSISTOR PreliminaryData Sheet R07DS0753EJ0100 Rev.1.00 May 25, 2012 Description The μPA...
Datasheet PDF File UPA2821T1L PDF File

UPA2821T1L
UPA2821T1L

Overview
μPA2821T1L MOS FIELD EFFECT TRANSISTOR PreliminaryData Sheet R07DS0753EJ0100 Rev.
1.
00 May 25, 2012 Description The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.
Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 3.
8 mΩ MAX.
(VGS = 10 V, ID = 26 A) • 4.
5 V Gate-drive available • Small surface mount package (8-pin HVSON (3333)) • Pb-free, Halogen Free Ordering Information Part No.
Lead Plating Packing Package μPA2821T1L-E1-AT ∗1 Pure Sn (Tin) Tape 3000 p/reel 8-pin HVSON (3333) μPA2821T1L-E2-AT ∗1 typ.
0.
028 g Note: ∗1.
Pb-free (This product does not contain Pb in external electrode and other parts.
) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Signal Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings 30 ±20 ±26 ±104 1.
5 3.
8 52 150 −55 to +150 18 32.
4 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) Channel to Case (Drain) Thermal Resistance Rth(ch-C) 83.
3 2.
4 °C/W °C/W Notes: ∗1.
PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2.
Mounted on a glass epoxy board of 25.
4 mm x 25.
4 mm x 0.
8 mmt ∗3.
Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH R07DS0753EJ0100 Rev.
1.
00 May 25, 2012 Page 1 of 6 μPA2821T1L Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate...


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