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FQU4N50TU_WS

Fairchild Semiconductor
Part Number FQU4N50TU_WS
Manufacturer Fairchild Semiconductor
Description N-Channel QFET MOSFET
Published Aug 3, 2015
Detailed Description FQU4N50TU_WS — N-Channel QFET® MOSFET FQU4N50TU_WS N-Channel QFET® MOSFET 500 V, 2.6 A, 2.7 Ω November 2013 Descripti...
Datasheet PDF File FQU4N50TU_WS PDF File

FQU4N50TU_WS
FQU4N50TU_WS

Overview
FQU4N50TU_WS — N-Channel QFET® MOSFET FQU4N50TU_WS N-Channel QFET® MOSFET 500 V, 2.
6 A, 2.
7 Ω November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 2.
6 A, 500 V, RDS(on) = 2.
7 Ω (Max.
) @ VGS = 10 V, ID = 1.
3 A • Low Gate Charge (Typ.
10 nC) • Low Crss (Typ.
6.
0 pF) • 100% Avalanche Tested D GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted.
 * 4 4 * ;  4 ; !5 8         *             1,%(62   1,/))62 8  9  *     8 '! ;  '!   +!'! ;  8 =+ !!5 8  1 ,%(62> 8  1,%(62   "!%(6       +  Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds                G S FQU4N50TU_WS ()) %& / &7 /) 7 ±:) %&) %& 7( 7( %( 7( ) :& ((@/() :))  * ' ' ' * < ' < *5  ? ? ?56 6 6 Thermal Characteristics Symbol Parameter RJC RJA Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQU4N50TU_WS 2.
78 110 50 Unit oC/W ©2009 Fairchild Semiconductor Corporation FQU4N50TU_WS Rev.
C1 1 www.
fairchildsemi.
com FQU4N50TU_WS — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQU4N50TU_WS Top Mark FQU4N50S Package IPAK Packing Method Ree...


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