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IRLU024ZPbF

Part Number	IRLU024ZPbF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Aug 3, 2015
Detailed Description	Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Swit...
Datasheet	IRLU024ZPbF PDF File

Overview

Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Free G Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 58mΩ S ID = 16A D-Pak I-...

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IRLU024ZPbF Power MOSFET - International Rectifier

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