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FQD3N60C

Fairchild Semiconductor
Part Number FQD3N60C
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Aug 3, 2015
Detailed Description FQD3N60C FQD3N60C 600V N-Channel MOSFET Features • 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 1...
Datasheet PDF File FQD3N60C PDF File

FQD3N60C
FQD3N60C

Overview
FQD3N60C FQD3N60C 600V N-Channel MOSFET Features • 2.
4A, 600V, RDS(on) = 3.
4Ω @VGS = 10 V • Low gate charge ( typical 10.
5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability January 2006 QFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D GS D-PAK FQD Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA* RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) {D z  G{ z z {S FQD3N60C 600 2.
4 1.
5 9.
6 ±30 150 2.
4 5.
0 4.
5 50 0.
4 -55 to +150 300 Typ.
---- Max.
2.
5 50 110 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W °C/W ©2006 Fairchild Semiconductor Corporation FQD3N60C REV.
A 1 www.
fairchildsemi.
com 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQD3N60C FQD3N60C Device FQD3N60CTM FQD3N60CTF Package D-PAK D...


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