DatasheetsPDF.com

TH58NVG3D4BTG00

Part Number	TH58NVG3D4BTG00
Manufacturer	Toshiba
Description	8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM
Published	Aug 4, 2015
Detailed Description	TOSHIBA CONFIDENTIAL TH58NVG3D4BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1024M...
Datasheet	TH58NVG3D4BTG00 PDF File

Overview

TOSHIBA CONFIDENTIAL TH58NVG3D4BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1024M × 8 BIT) CMOS NAND E2PROM (Multi Level Cell) Lead-Free DESCRIPTION The TH58NVG3D4B is a single 3.
3 V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages × 4096blocks.
The device has a 2112-byte static register which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 2112 bytes × 128 pages).
The TH58NVG3D4B is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras ...

Similar Datasheet

TH58NVG3D4BTG00 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)