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DTU20N10

Din-Tek
Part Number DTU20N10
Manufacturer Din-Tek
Description N-Channel 100 V (D-S) MOSFET
Published Aug 5, 2015
Detailed Description N-Channel 100 V (D-S) MOSFET DTU20N10 www.din-tek.jp PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.066 at VGS = 10 ...
Datasheet PDF File DTU20N10 PDF File

DTU20N10
DTU20N10

Overview
N-Channel 100 V (D-S) MOSFET DTU20N10 www.
din-tek.
jp PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max.
0.
066 at VGS = 10 V 0.
080 at VGS = 4.
5 V ID (A) 20 15.
2 Qg (Typ.
) 19.
8 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: TO-252 D G APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C L = 0.
1 mH TC = 25 °C TA = 25 °Cc VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 100 ± 20 20 15.
2 25 15 11.
25 41.
7b 2.
1 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a.
Duty cycle  1 %.
b.
See SOA curve for voltage derating.
c.
When mounted on 1" square PCB (FR-4 material).
d.
Base on TC = 25 °C.
Symbol RthJA RthJC Limit 60 3 Unit °C/W 1 DTU20N10 www.
din-tek.
jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 °C VDS = 100 V, VGS = 0 V, TJ = 150 °C VDS 10 V, VGS = 10 V VGS = 10 V, ID = 6.
6 A VGS = 4.
5 V, ID = 6 A VDS = 15 V, ID = 6.
6 A Input Capacitance Ciss Output Capacitance Coss VDS = 50 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Crss Qg Qgs VDS = 50 V, VGS = 10 V, ID = 6.
6 A Qgd Gate Resistance Rg f = ...


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