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CDBM180-HF

Comchip Technology
Part Number CDBM180-HF
Manufacturer Comchip Technology
Description SMD Schottky Barrier Rectifiers
Published Aug 5, 2015
Detailed Description SMD Schottky Barrier Rectifiers CDBM120-HF Thru CDBM1150-HF Reverse Voltage: 20 to 150 Volts Forward Current: 1.0 Amp R...
Datasheet PDF File CDBM180-HF PDF File

CDBM180-HF
CDBM180-HF

Overview
SMD Schottky Barrier Rectifiers CDBM120-HF Thru CDBM1150-HF Reverse Voltage: 20 to 150 Volts Forward Current: 1.
0 Amp RoHS Device Halogen Free Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
-Low profile surface mounted application in order to optimize board space.
-Tiny plastic SMD package.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
-Lead-free parts meet environmental standards of MIL-STD-19500 /228 Mechanical data -Case: Molded plastic, JEDEC Mini SMA/SOD-123.
-Terminals: Solde plated, solderable per MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any -Weight:0.
027 gram(approx.
).
Mini SMA/SOD-123 0.
154(3.
90) 0.
138(3.
50) 0.
012(0.
30) Typ.
0.
071(1.
80) 0.
055(1.
40) 0.
035(0.
90) Typ.
0.
122(2.
80) 0.
096(2.
40) 0.
067(1.
70) 0.
051(1.
30) 0.
035(0.
90) Typ.
Dimensions in inches and (millimeter) Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol CDBM CDBM CDBM 120-HF 130-HF 140-HF CDBM CDBM CDBM CDBM CDBM 150-HF 160-HF 180-HF 1100-HF 1150-HF Unit Repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 150 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 V Continuous reverse voltage VR 20 30 40 50 60 80 100 150 V Maximum forward voltage @IF=1.
0A VF 0.
50 0.
70 0.
85 0.
92 V Forward rectified current Forward surge current, 8.
3ms half sine wave superimposed on rated load (JEDEC method) Reverse current on VR=VRRM O @TA=25 C O @TA=125 C Typ.
thermal resistance, junction to ambient air IO IFSM IR RθJA 1.
0 A 30 A 0.
5 10 mA 98 O C/W Typ.
diode junction capacitance (Note 1) CJ 120 pF Operating junction temperature TJ -55 to +125 -55 to +150 O C Storage temperature TSTG -65 to +175 O C Note 1: f=1MHz and applied 4V DC reverse vo...


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