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LBC857CWT1G

Part Number	LBC857CWT1G
Manufacturer	Leshan Radio Company
Description	General Purpose Transistors
Published	Aug 6, 2015
Detailed Description	LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon These transistors are designed for general purpose ...
Datasheet	LBC857CWT1G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications.
They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications.
Features We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage V CEO V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C BC856 –65 –80 –5.
0 –100 BC857 –45 –50 –5.
0 –100 BC858 –30 –30 –5.
0 –100 Unit V V V mAdc LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G 3 1 2 SOT– 323 / SC-70 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C 1 BASE DEVICE MA...

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LBC857CWT1G General Purpose Transistors - Leshan Radio Company

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