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IRF7805ZPbF

International Rectifier
Part Number IRF7805ZPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 6, 2015
Detailed Description Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing System...
Datasheet PDF File IRF7805ZPbF PDF File

IRF7805ZPbF
IRF7805ZPbF

Overview
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems.
l Lead-Free Benefits l Very Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 100% tested for Rg PD - 96011A IRF7805ZPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.
) :30V 6.
8m @VGS = 10V 18nC S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current fPower Dissipation fPower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Max.
30 ± 20 16 12 120 2.
5 1.
6 0.
02 -55 to + 150 Units V A W W/°C °C Typ.
––– ––– Max.
20 50 Units °C/W Notes  through … are on page 10 www.
irf.
com 1 06/30/05 IRF7805ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient 30 ––– ––– V VGS = 0V, ID = 250µA ––– 0.
023 ––– ––– 5.
5 6.
8 ––– 7.
0 8.
7 V/°C Reference to 25°C, ID = 1mA emΩ VGS = 10V, ID = 16A eVGS = 4.
5V, ID = 13A 1.
35 ––– 2.
25 V VDS = VGS, ID = 250µA ––– - 4.
7 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.
0 µA VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance Qg Total Gate Charge 64 ––– ––– ––– 18 27 S VDS = 15V, ID = 12A Qgs1 Qgs2 Qgd Qgodr Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ...


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