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FDD4N60NZ

Fairchild Semiconductor
Part Number FDD4N60NZ
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 7, 2015
Detailed Description FDD4N60NZ — N-Channel UniFETTM II MOSFET FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features • RDS(on) ...
Datasheet PDF File FDD4N60NZ PDF File

FDD4N60NZ
FDD4N60NZ

Overview
FDD4N60NZ — N-Channel UniFETTM II MOSFET FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.
4 A, 2.
5 Ω Features • RDS(on) = 1.
9 Ω (Typ.
) @ VGS = 10 V, ID = 1.
7 A • Low Gate Charge (Typ.
8.
3 nC) • Low Crss (Typ.
3.
7 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply November 2013 Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.
This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D G S D D-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2012 Fairchild Semiconductor Corporation FDD4N60NZ Rev.
C1 1 FDD4N60NZ 600 ±25 3.
4 2 13.
6 179.
2 3.
4 11.
4 5 114 0.
9 -55 to +150 300 Unit V V A A mJ A mJ V/ns W W/oC oC oC FDD4N60NZ 1.
1 110 Unit oC/W www.
fairchildsemi.
com FDD4N60NZ — N-Cha...


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