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LBC817-16WT1G

Leshan Radio Company
Part Number LBC817-16WT1G
Manufacturer Leshan Radio Company
Description General Purpose Transistors
Published Aug 7, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistors • We declare that the material of product compliance with RoHS r...
Datasheet PDF File LBC817-16WT1G PDF File

LBC817-16WT1G
LBC817-16WT1G


Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors • We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC817-16WT1G S-LBC817-16 W T1G MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage V CEO V CBO V EBO Collector Current — Continuous I C Value 45 50 5.
0 500 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 150 Unit mW R θJA PD 1.
2 mW/°C 833 °C/W 200 mW R θJA T J , Tstg 1.
6 625 –55to+150 mW/°C °C/W °C DEVICE MARKING LBC817–16W T1G = 6A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, IC = 10 µA) Emitter–Base Breakdown Voltage (I E = 1.
0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
V (BR)CEO V (BR)CES V (BR)EBO I CBO 45 50 5.
0 — — Typ — — — — — 3 1 2 SC-70 1 BASE 3 COLLECTOR 2 EMITTER Max Unit —V —V —V 100 nA 5.
0 µA Rev.
O 1/3 LESHAN RADIO COMPANY, LTD.
LBC817-16WT1G S-LBC817-16WT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min ON CHARACTERISTICS DC Current Gain (I C= 100 mA, V CE = 1.
0 V) Collector–Emitter Saturation Voltage (I C = 500 mA, I B = 50 mA) Base–Emitter On Voltage ( I C = 500 mA, V CE = 1.
0 V) h FE V CE(sat) V BE(on) 100 — — Typ Max Unit — 250 — 0.
7 V — 1.
2 V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth P...



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