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L2SA812RLT3G

Leshan Radio Company
Part Number L2SA812RLT3G
Manufacturer Leshan Radio Company
Description General Purpose Transistors
Published Aug 7, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpit...
Datasheet PDF File L2SA812RLT3G PDF File

L2SA812RLT3G
L2SA812RLT3G

Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V.
ƽEpitaxial planar type.
S-L2SA812QLT1G Series ƽNPN complement: L2SC1623 ƽWe declare that the material of product compliance with RoHS requirements.
3 ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1 DEVICE MARKING AND ORDERING INFORMATION 2 Device Marking L2SA812QLT1G S-L2SA812QLT1G M8 L2SA812QLT3G S-L2SA812QLT3G L2SA812RLT1G S-L2SA812RLT1G L2SA812RLT3G S-L2SA812RLT3G L2SA812SLT1G S-L2SA812SLT1G L2SA812SLT3G S-L2SA812SLT3G M8 M6 M6 M7 M7 MAXIMUM RATINGS Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel SOT-23 1 BASE 3 COLLECTOR 2 EMITTER Rating Collector-Emitter Voltage Symbol VCEO L2SA812 -50 Unit V Collector-Base Voltage Emitter-Base Voltage VCBO -60 V VEBO -6 V Collector current-continuoun IC THERMAL CHARATEERISTICS -150 mAdc Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA Tj ,Tstg Max 200 1.
8 556 200 2.
4 417 -55 to +150 Unit mW mW/oC oC/W mW mW/oC oC/W oC Rev.
O 1/5 LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series S-L2SA812QLT1G Series ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage (IE=-50 µΑ ) Collector-Base Breakdown Voltage (IC=-50 µA) Collector Cutoff Current (VCB=-50V) Emitter Cutoff Current (VBE=-6V) V(BR)CEO V(BR)EBO V(BR)CBO -50 -6 -60 ICBO IEBO - ---- - -0.
1 -0.
1 ON CHARACTERISTICS DC Current Gain (IC=-1mA,VCE=-6.
0V) Collector-Emitter Saturation Voltage (IC=-100mA,IB=-10mA...


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