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IRFR540ZPbF

Part Number	IRFR540ZPbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Aug 8, 2015
Detailed Description	Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repeti...
Datasheet	IRFR540ZPbF PDF File

Overview

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
G Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÃIAR Av...

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IRFR540ZPbF HEXFET Power MOSFET - International Rectifier

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