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IRFU540Z

International Rectifier
Part Number IRFU540Z
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Aug 8, 2015
Detailed Description APPROVED PD - TBD AUTOMOTIVE MOSFET Features lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating T...
Datasheet PDF File IRFU540Z PDF File

IRFU540Z
IRFU540Z

Overview
APPROVED PD - TBD AUTOMOTIVE MOSFET Features lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) hSingle Pulse Avalanche Energy Tested Value ÙIAR Avalanche Current gEAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Reflow Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter jRθJC ijRθJA jRθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient HEXFET® is a registered trademark of International Rectifier.
www.
irf.
com IRFR540Z IRFU540Z HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 28.
5mΩ S ID = 35A D-Pak IRFR540Z I-Pak IRFU540Z Max.
35 25 140 91 0.
61 ± 20 39 75 See Fig.
12a, 12b, 15, 16 -55 to + 175 300 y y10 lbf in (1.
1N m) Units A W W/°C V mJ A mJ °C Typ.
––– ––– ––– Max.
1.
64 40 110 Units °C/W 1 2/3/05 IRFR/U540Z Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Break...


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