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2SA1955FV

Part Number	2SA1955FV
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Aug 9, 2015
Detailed Description	2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955FV General Purpose Amplifier Applications ...
Datasheet	2SA1955FV PDF File

Overview

2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = −15 mV (typ.
) @IC = −10 mA/IB = −0.
5 mA • Large collector current: IC = −400 mA (max) Absolute Maximum Ratings (Ta = 25°C) 1.
2±0.
05 0.
8±0.
05 0.
4 0.
4 0.
22±0.
05 Unit: mm 1.
2±0.
05 0.
8±0.
05 1 23 0.
32±0.
05 Characteristics Symbol Rating Unit 0.
13±0.
05 0.
5±0.
05 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −15 −12 −5 −400 −50 15...

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