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IRF8113GPbF

International Rectifier
Part Number IRF8113GPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 10, 2015
Detailed Description Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Convert...
Datasheet PDF File IRF8113GPbF PDF File

IRF8113GPbF
IRF8113GPbF

Overview
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free l Halogen-Free Benefits l Very Low RDS(on) at 4.
5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PD - 96251 IRF8113GPbF VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg Typ.
:5.
6m @VGS = 10V 24nC S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current fPower Dissipation fPower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fRθJA Junction-to-Ambient Max.
30 ± 20 17.
2 13.
8 135 2.
5 1.
6 0.
02 -55 to + 150 Typ.
––– ––– Max.
20 50 Units V A W W/°C °C Units °C/W Notes  through … are on page 10 www.
irf.
com 1 07/09/09 IRF8113GPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 30 ––– ––– V VGS = 0V, ID = 250µA ––– 0.
024 ––– ––– 4.
7 5.
6 ––– 5.
8 6.
8 V/°C Reference to 25°C, ID...


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