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NP32N055HDE

NEC
Part Number NP32N055HDE
Manufacturer NEC
Description N-Channel Power MOSFET
Published Aug 10, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPT...
Datasheet PDF File NP32N055HDE PDF File

NP32N055HDE
NP32N055HDE

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX.
(VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX.
(VGS = 5.
0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP.
ORDERING INFORMATION PART NUMBER PACKAGE NP32N055HDE NP32N055IDE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP32N055SDE Note Not for new design.
TO-252 (JEDEC) / MP-3ZK ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) ID(DC) ±32 Drain Current (pulse) Note1 ID(pulse) ±100 Total Power Dissipation (TC = 25°C) PT1 66 Total Power Dissipation (TA = 25°C) PT2 1.
2 Channel Temperature Tch 175 Storage Temperature Tstg –55 to ...


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