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NP32N055SDE

NEC
Part Number NP32N055SDE
Manufacturer NEC
Description N-Channel Power MOSFET
Published Aug 10, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPT...
Datasheet PDF File NP32N055SDE PDF File

NP32N055SDE
NP32N055SDE

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX.
(VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX.
(VGS = 5.
0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP.
ORDERING INFORMATION PART NUMBER PACKAGE NP32N055HDE NP32N055IDE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP32N055SDE Note Not for new design.
TO-252 (JEDEC) / MP-3ZK ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) ID(DC) ±32 Drain Current (pulse) Note1 ID(pulse) ±100 Total Power Dissipation (TC = 25°C) PT1 66 Total Power Dissipation (TA = 25°C) PT2 1.
2 Channel Temperature Tch 175 Storage Temperature Tstg –55 to +175 Single Avalanche Current Note2 IAS 28 / 21 / 8 Single Avalanche Energy Note2 EAS 7.
8 / 44 / 64 V V A A W W °C °C A mJ (TO-251) (TO-252) Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.
27 °C/W 125 °C/W The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D15309EJ2V0DS00 (2nd edition) Date Published July 2005 NS CP(K) Printed in Japan The mark shows major revised points.
2001, 2005 NP32N055HDE, NP32N055IDE, NP32N055SDE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 55 V, V...


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