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LBC817-16LT1G

Leshan Radio Company
Part Number LBC817-16LT1G
Manufacturer Leshan Radio Company
Description General Purpose Transistors
Published Aug 10, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance...
Datasheet PDF File LBC817-16LT1G PDF File

LBC817-16LT1G
LBC817-16LT1G

Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements.
LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage V CEO V CBO V EBO Collector Current — Continuous I C Value 45 50 5.
0 500 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA T J , T stg Max Unit 225 mW 1.
8 mW/°C 556 °C/W 300 2.
4 417 –55 to +150 mW mW/°C °C/W °C DEVICE MARKING LBC817–16LT1G = 6A; LBC817–25LT1G = 6B; LBC817–40LT1G = 6C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) Emitter–Base Breakdown Voltage (I E = –1.
0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
V (BR)CEO V (BR)CES V (BR)EBO I CBO 45 50 5.
0 — — Typ — — — — — 3 1 2 SOT–23 1 BASE 3 COLLECTOR 2 EMITTER Max Unit —V —V —V 100 nA 5.
0 µA 1/3 LESHAN RADIO COMPANY, LTD.
LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C= 100 mA, V CE = 1.
0 V) LBC817–16 LBC817–25 LBC817–40 (I C = 500 mA, V CE = 1.
0 V) Collector–Emitter Saturation Voltage (I C = 500 mA, I B = 50 mA) Base–Emitter On Voltage ( I C = 500 mA, V CE = 1.
0 V) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product ( I C = 10 mA, V CE = 5.
0 V dc, f = 100 MHz) Output C...


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