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L9014SLT3G

Leshan Radio Company
Part Number L9014SLT3G
Manufacturer Leshan Radio Company
Description General Purpose Transistors
Published Aug 10, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽComplementary to L9014. ƽWe declare that th...
Datasheet PDF File L9014SLT3G PDF File

L9014SLT3G
L9014SLT3G


Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors NPN Silicon FEATURE ƽComplementary to L9014.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9014QLT1G Series S-L9014QLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device L9014QLT1G S-L9014QLT1G Marking 14Q Shipping 3000/Tape&Reel L9014QLT3G S-L9014QLT3G 14Q 10000/Tape&Reel L9014RLT1G S-L9014RLT1G 14R 3000/Tape&Reel L9014RLT3G S-L9014RLT3G 14R 10000/Tape&Reel L9014SLT1G S-L9014SLT1G 14S 3000/Tape&Reel L9014SLT3G S-L9014SLT3G 14S 10000/Tape&Reel L9014TLT1G S-L9014TLT1G 14T 3000/Tape&Reel L9014TLT3G S-L9014TLT3G 14T 10000/Tape&Reel MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun Symbol VCEO VCBO VEBO IC Value 45 50 5 100 Unit V V V mA THERMAL CHARATEERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC PD 225 mW 1.
8 mW/ oC Thermal Resistance, Junction to Ambient R©JA 556 o C/W Total Device Dissipation PD Alumina Substrate, (2) TA=25 oC 300 mW Derate above 25oC 2.
4 mW/ oC Thermal Resistance, Junction to Ambient R©JA 417 oC /W Junction and Storage Temperature 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
TJ ,Tstg -55 to +150 o C 3 1 2 SOT– 23 COLLECTOR 3 1 BASE 2 EMITTER Rev.
O 1/4 LESHAN RADIO COMPANY, LTD.
L9014QLT1G Series S-L9014QLT1G Series ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC=1.
0mA) Emitter-Base Breakdown Voltage (IE=100­A) Collector-Base Breakdown Voltage (IC=100­A) Collector Cutoff Current (VCB=40V) Emitter Cutoff Current (VEB=3V) ON CHARACTERISTICS Symbol V(BR)CEO Min 45 V(BR)EBO 5 V(BR)CBO 50 ICBO IEBO - Typ - - - ...


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