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LMBT6429LT3G

Part Number	LMBT6429LT3G
Manufacturer	Leshan Radio Company
Description	Amplifier Transistors
Published	Aug 10, 2015
Detailed Description	LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon z We declare that the material of product compliance with...
Datasheet	LMBT6429LT3G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
Amplifier Transistors NPN Silicon z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION Device (S-)LMBT6428LT1G (S-)LMBT6428LT3G (S-)LMBT6429LT1G (S-)LMBT6429LT3G Marking 1KM 1KM M1L M1L Shipping 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel MAXIMUM RATINGS Rating Value Symbol 6428LT1 6429LT1 Unit Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C 50 45 60 55 6.
0 200 Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS LMBT6428LT1G LMBT6429LT1G S-LMBT6428LT1G S-LMBT6429LT1G 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) 3 COLLECTOR 1 BASE Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.
8 mW/°C 556 °C/W 300 mW 2.
4 mW/°C 417 –55 to +150 °C/W °C 2 EMITTER (S-)LMBT6428LT1G = 1KM, (S-)LMBT6429LT1G = M1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V (BR)CEO Vdc (I C = 1.
0 mAdc, I B = 0) LMBT6428LT1G 50 — (I C = 1.
0 mAdc, I B = 0) LMBT6429LT1G 45 — Collector–Base Breakdown Voltage V (BR)CBO Vdc (I C = 0.
1mAdc, I E = 0) LMBT6428LT1G 60 — (I C = 0.
1mAdc, I E = 0) LMBT6429LT1G 55 — Collector Cutoff Current I CES µAdc ( V CE = 30Vdc, ) — 0.
1 Collector Cutoff Current I CBO µAdc ( V CB = 30Vdc, I E = 0 ) — 0.
01 Emitter Cutoff Current ( V EB = 5.
0Vdc, I C= 0) I EBO — 0.
01 µAdc 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
...

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