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L8050HSLT3G

Part Number	L8050HSLT3G
Manufacturer	Leshan Radio Company
Description	General Purpose Transistors
Published	Aug 11, 2015
Detailed Description	LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. I...
Datasheet	L8050HSLT3G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package.
IC =1.
5 A.
ƽEpitaxial planar type.
ƽNPN complement: L8050H ƽPb-Free Package is available.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8050HPLT1G S-L8050HPLT1G 1HA 3000/Tape&Reel L8050HPLT3G S-L8050HPLT3G 1HA 10000/Tape&Reel L8050HQLT1G S-L8050HQLT1G 1HC 3000/Tape&Reel L8050HQLT3G S-L8050HQLT3G 1HC 10000/Tape&Reel L8050HRLT1G L8050HRLT3G L8050HSLT1G L8050HSLT3G S-L8050HRLT1G S-L8050HRLT3G S-L8050HSLT1G S-L8050HSLT3G 1HE 1HE 1HG 1HG 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Junction and Storage Temperature 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
Symbol VCEO VCBO VEBO IC Max 25 40 5 1500 Unit V V V mAdc Symbol PD R θJ A PD R θJ A T j,T St g Max Unit 225 mW 1.
8 mW/°C 556 °C/W 300 mW 2.
4 mW/°C 417 -55 to +150 °C/W °C L8050HQLTIG Series S-L8050HQLTIG Series 3 1 2 SOT–23 COLLECTOR 3 1 BASE 2 EMITTER Rev.
A 1/3 LESHAN RADIO COMPANY, LTD.
L8050HQLTIG Series S-L8050HQLTIG Series ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=1.
0mA) V(BR)CEO 25 – Emitter-Base Breakdown Voltage (IE=100µΑ) V(BR)EBO 5 – Collector-Base Breakdown Voltage (IC=100µΑ) V(BR)CBO 40 – Collector Cutoff Current (VCB=35V) ICBO – – Emitter ...

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