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L8550QLT1G

Leshan Radio Company
Part Number L8550QLT1G
Manufacturer Leshan Radio Company
Description General Purpose Transistors
Published Aug 12, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE We declare that the material of product comp...
Datasheet PDF File L8550QLT1G PDF File

L8550QLT1G
L8550QLT1G

Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L8550PLT1G s-L8550PLT1G 85P 3000/Tape&Reel L8550PLT3G s-L8550PLT3G 85P 10000/Tape&Reel L8550QLT1G s-L8550QLT1G 1YD 3000/Tape&Reel L8550QLT3G L8550RLT1G s-L8550QLT3G s-L8550RLT1G 1YD 1YF 10000/Tape&Reel 3000/Tape&Reel L8550RLT3G s-L8550RLT3G 1YF 10000/Tape&Reel L8550SLT1G s-L8550SLT1G 1YH 3000/Tape&Reel L8550SLT3G s-L8550SLT3G 1YH 10000/Tape&Reel MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base voltage Emitter-base Voltage Collector current-continuoun Symbol V CEO V CBO V EBO IC Value -25 -40 -5 -800 Unit V V V mAdc THERMALCHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.
8 mW /°C R θJA 556 °C/W PD 300 mW 2.
4 mW /°C R θJA 417 °C/W T J , T stg -55 to +150 °C 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
L8550PLT1G Series S-L8550PLT1G Series 3 1 2 SOT– 23 COLLECTOR 3 1 BASE 2 EMITTER Rev.
O 1/4 LESHAN RADIO COMPANY, LTD.
L8550PLT1G Series S-L8550PLT1G Series ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) Characteristic OFFCHARACTERISTICS Collector-Emitter Breakdown Voltage (I C =-1.
0mA) Emitter-Base Breakdown Voltage (I E = -100 µA) Collector-Base Breakdown voltage (I C= -100 µA) Collector Cutoff Current (VCB = -35 V) Emitter Cutoff Current (VEB = -4V) 1.
FR-5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% a...


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