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XL1000-BD

MA-COM
Part Number XL1000-BD
Manufacturer MA-COM
Description Low Noise Amplifier
Published Aug 12, 2015
Detailed Description XL1000-BD Low Noise Amplifier 20.0-40.0 GHz Features  Self Bias Architecture  Small Size  3.0 or 5.0 V Operation  20...
Datasheet PDF File XL1000-BD PDF File

XL1000-BD
XL1000-BD

Overview
XL1000-BD Low Noise Amplifier 20.
0-40.
0 GHz Features  Self Bias Architecture  Small Size  3.
0 or 5.
0 V Operation  20.
0 dB Small Signal Gain  2.
0 dB Noise Figure  +9.
0 dBm P1dB Compression Point  100% On-Wafer RF, DC and Noise Figure Testing  100% Visual Inspection to MIL-STD-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s three stage 20.
0-40.
0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.
0 dB with a noise figure of 2.
0 dB across the band.
This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Chip Device Layout Rev.
V1 Absolute...


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