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STW24N60M2

STMicroelectronics
Part Number STW24N60M2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Aug 13, 2015
Detailed Description STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg 22 Power MOSFE...
Datasheet PDF File STW24N60M2 PDF File

STW24N60M2
STW24N60M2

Overview
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.
168 Ω typ.
, 18 A MDmesh II Plus™ low Qg 22 Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB TAB 123 I2PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1.
Internal schematic diagram D(2, TAB) Features Order codes VDS @ TJmax RDS(on) max ID STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 650 V 0.
19 Ω 18 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
They are therefore suitable for the most demanding high efficiency converters...


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