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LBC848BDW1T1G

Leshan Radio Company
Part Number LBC848BDW1T1G
Manufacturer Leshan Radio Company
Description Dual-Channel Transistor
Published Aug 14, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpo...
Datasheet PDF File LBC848BDW1T1G PDF File

LBC848BDW1T1G
LBC848BDW1T1G

Overview
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications.
They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
6 54 LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G Q2 12 Q1 3 See Table MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous V CEO V CBO V EBO IC BC846 65 80 6.
0 100 BC847 BC848 45 30 50 30 6.
0 5.
0 100 100 Unit V V V mAdc 6 5 4 1 2 3 SOT-363 /SC-88 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
ORDERING INFORMATION Device LBC846BDW1T1G LBC846BDW1T3G LBC847BDW1T1G LBC847BDW1T3G LBC847CDW1T1G LBC847CDW1T3G LBC848BDW1T1G LBC848BDW1T3G LBC848CDW1T1G LBC848CDW1T3G Marking 1B 1B 1F 1F 1G 1G 1K 1K 1L 1L Symbol PD R θJA T J , T stg Max Unit 380 mW 250 mW 3.
0 328 –55 to +150 mW/°C °C/W °C Shipping 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 1/6 LESHAN RADIO COMPANY, LTD.
LBC846BDW1T1G, LBC847BDW1T1G, LBC847CDW1T1G, LBC848BDW1T1G, LBC848CDW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mA) LBC846 Series LBC847 Series V (BR)CEO LBC848 Series Collector–Emitter Breakdown Voltage (I C = 10 µA, V EB = 0) LBC846 Series LBC847 Series V (BR)CES LBC848 Series Collector–Base Breakdown Voltage (I C = 10 µA) LBC846 Series LBC847 Series V (BR)CBO LBC848 Series Emitter–Base Breakdown Voltage (I E = 1.
0 µA) LBC846 Series LBC84...


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