DatasheetsPDF.com

LDTC144WET1G

Part Number	LDTC144WET1G
Manufacturer	LRC
Description	Bias Resistor Transistors
Published	Aug 15, 2015
Detailed Description	LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series NPN Silicon Surface Mount Transistors S-LDTC11...
Datasheet	LDTC144WET1G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors LDTC114EET1G Series NPN Silicon Surface Mount Transistors S-LDTC114EET1G Series with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.
The BRT eliminates these individual components by integrating them into a single device.
The use of a BRT can reduce both system cost and board space.
The device is housed in the SC-89 package which is designed for low power surface mount applications.
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC-89 package can be soldered using wave or reflow.
The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SC-89 PIN 1 BASE (INPUT) R1 R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Collector-Base Voltage VCBO 50 Collector-Emitter Voltage VCEO 50 Collector Current IC 100 THERMAL CHARACTERISTICS Unit Vdc Vdc mAdc Rating Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol PD RqJA Value 200 1.
6 600 Unit mW mW/°C °C/W PD RqJA 300 mW 2.
4 mW/°C 400 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings o...

Similar Datasheet

LDTC144WET1G Bias Resistor Transistors - LRC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)