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LDTC144GET3G

LRC
Part Number LDTC144GET3G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 15, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTC144GET3G PDF File

LDTC144GET3G
LDTC144GET3G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC144GET1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector DTC144GE Power DTC144GUA / DTC144GKA dissipation DTC144GSA Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 150 200 300 150 −55 to +150 DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC144GET1G L1 _ 47 3000/Tape & Reel LDTC144GET3G L1 _ 47 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT Min.
50 50 5 − 65 − 68 32.
9 − Typ.
− − − − − − − 47 250 Max.
− − − 0.
5 130 0.
3 − 61.
1 − 3 1 2 SC-89 1 BASE R1 R2 Unit V V V mA mW C C 3 COLLECTOR 2 EMITTER Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=160µA VCB=50V VEB=4V IC=10mA , IB=0.
5mA IC=5mA , VCE=5V − VCE=10V , IE= −5mA , f=100MHz ∗ 1/3 DC CURRENT GAIN : hFE(V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zE...


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