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IRL3715ZPbF

International Rectifier
Part Number IRL3715ZPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 15, 2015
Detailed Description Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95581 IRL3715ZP...
Datasheet PDF File IRL3715ZPbF PDF File

IRL3715ZPbF
IRL3715ZPbF

Overview
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95581 IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :20V 11m 7.
0nC Benefits l Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715Z D2Pak IRL3715ZS TO-262 IRL3715ZL Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds fMounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case fCase-to-Sink, Flat Greased Surface fÃJunction-to-Ambient gJunction-to-Ambient (PCB Mount) Notes  through † are on page 12 www.
irf.
com Max.
20 ± 20 50 h 36 h 200 45 23 0.
30 -55 to + 175 300 (1.
6mm from case) y y10 lbf in (1.
1N m) Typ.
––– 0.
50 ––– ––– Max.
3.
33 ––– 62 40 Units V A W W/°C °C Units °C/W 1 07/20/04 IRL3715Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient 20 ––– ––– V VGS = 0V, ID = 250µA ––– 0.
014 ––– V/°C Reference to 25°C, ID = 1mA e––– 9.
2 11 mΩ VGS = 10V, ID = 15A ––– 12.
4 15.
5 eVGS = 4.
5V, ID = 12A 1.
65 2.
1 2.
55 V VDS = VGS, ID = 250µA ––– -5.
2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.
0 µA VDS = 16V, VGS = 0V ––– ––– 150 VDS = 16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 ...


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