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RJK0222DNS

Part Number	RJK0222DNS
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Aug 15, 2015
Detailed Description	Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switchi...
Datasheet	RJK0222DNS PDF File

Overview

Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0120 Rev.
1.
20 May 16, 2012 Application DC-DC conversion for PC and Server.
Features  Low on-resistance  Capable of 4.
5 V gate drive  High density mounting  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008JD-A (Package: HWSON3046-8) 5678 234 D1 D1 D1 9 S1/D2 5678 4321 1 G1 MOS1 8 G2 9 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source S2 S2 S2 56 7 4321 (Bottom View) MOS2 and Schottky Barrier Diode Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25C, Rg  50  3.
Tc = 25C MOS1 25 ±20 14 56 14 5 3.
1 8 150 –55 to +150 Ratings MOS2 25 ±12 16 64 16 8 8.
0 10 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C R07DS0125EJ0120 Rev.
1.
20 May 16, 2012 Page 1 of 10 RJK0222DNS Electrical Characteristics • MOS1 Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4.
Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 25 — — 1.
2 — — — — — — — — — — — — — — — — Typ — — — — 7.
6 10.
5 30 810 130 74 1.
2 6.
2 2.
8 1.
9 7 4.
1 33 5.
1 0.
84 20 Max — ±0.
1 1 2.
5 9.
2 13.
7 — — — — — — — — — — — — 1.
10 — ...

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RJK0222DNS Silicon N Channel Power MOS FET - Renesas Technology

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