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LDTA114WET1G

LRC
Part Number LDTA114WET1G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 15, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTA114WET1G PDF File

LDTA114WET1G
LDTA114WET1G


Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation, making the device design easy.
4) Higher mounting densities ca.
n be achieved.
z We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Supply voltage Input voltage Parameter Output current Power dissipation Symbol VCC VI IO IC(Max.
) PD Limits −50 −30 to +10 −100 −100 200 Unit V V mA mW Junction temperature Storage temperature Tj Tstg 150 −55 to +150 DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA114WET1G L6 10 4.
7 3000/Tape & Reel LDTA114WET3G L6 10 4.
7 10000/Tape & Reel °C °C LDTA114WET1G 3 1 2 SC-89 1 BASE R1 R2 3 COLLECTOR 2 EMITTER zExternal characteristics (Unit: mm) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗ Characteristics of built-in transistor Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗ Min.
− −3 − − − 24 7 0.
37 − Typ.
− − −0.
1 − − − 10 0.
47 250 Max.
−0.
8 − −0.
3 −0.
88 −0.
5 − 13 0.
57 − Unit V V mA µA − kΩ − MHz Conditions VCC= −5V , IO= −100µA VO= −0.
3V , IO= −2mA IO= −10mA , II= −0.
5mA VI= −5V VCC= −50V , VI=0V IO= −10mA , VO= −5V − − VCE= −10V , IE=5mA , f=100MHz 1/3 INPUT VOLTAGE : VI(on) (V) zElectrical characteristics curves −100 −50 VO= −0.
3V −20 −10 −5 −2 −1 −500m Ta= −40°C Ta= 25°C Ta=100°C −200m −100m −100µ −1m −10m OUTPUT CURRENT : IO (A) −100m Fig.
1 Input voltage vs.
Output current ...



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