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IRFR4615PBF

International Rectifier
Part Number IRFR4615PBF
Manufacturer International Rectifier
Description Power MOSFETs
Published Aug 15, 2015
Detailed Description Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Datasheet PDF File IRFR4615PBF PDF File

IRFR4615PBF
IRFR4615PBF

Overview
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFR4615PbF IRFU4615PbF HEXFET® Power MOSFET D VDSS 150V RDS(on) typ.
34m: max.
42m: S ID 33A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free DD S G DPak IRFR4615PbF S D G IPAK IRFU4615PbF G Gate D Drain S Source Base Part Number IRFR4615PbF IRFR4615TRLPbF IRFU4615PbF Package Type D-PAK I-PAK Standard Pack Form Tube/Bulk Tape and Reel Left Tube/Bulk Quantity 75 3000 75 Orderable Part Number IRFR4615PbF IRFR4615TRLPbF IRFU4615PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V cPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current cRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter jJunction-to-Case iJunction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Notes  through ˆ are on page 11 Max.
33 24 140 144 0.
96 ± 20 38 -55 to + 175 300 109 See Fig.
14, 15, 22a, 22b, Typ.
––– ––– ––– Max.
1.
045 50 110 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 www.
irf.
com © 2013 International Rectifier May 16, 2013 IRFR/U4615PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current...


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