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FQD3P50TM_F085

Fairchild Semiconductor
Part Number FQD3P50TM_F085
Manufacturer Fairchild Semiconductor
Description 500V P-Channel MOSFET
Published Aug 15, 2015
Detailed Description FQD3P50TM_F085 500V P-Channel MOSFET November 2010 FQD3P50TM_F085 500V P-Channel MOSFET General Description These P-Ch...
Datasheet PDF File FQD3P50TM_F085 PDF File

FQD3P50TM_F085
FQD3P50TM_F085

Overview
FQD3P50TM_F085 500V P-Channel MOSFET November 2010 FQD3P50TM_F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for electronic lamp ballast based on complimentary half bridge.
Features • -2.
1A, -500V, RDS(on) = 4.
9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.
5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant S D! GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds G! ● ● ▶▲ ● ! D FQD3P50TM_F085 -500 -2.
1 -1.
33 -8.
4 ± 30 250 -2.
1 5.
0 -4.
5 2.
5 50 0.
4 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FQD3P50TM_F085 Rev.
C1 1 Typ Max Units -- 2.
5 °C/W -- 50 °C/W -- 110 °C/W www.
fairchildsemi.
com FQD3P50TM_F085 500V P-Channel MOSFET Elerical Characteri...


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