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FDD3672_F085

Fairchild Semiconductor
Part Number FDD3672_F085
Manufacturer Fairchild Semiconductor
Description N-Channel UltraFET Trench MOSFET
Published Aug 15, 2015
Detailed Description FDD3672_F085 N-Channel UltraFET Trench MOSFET March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28m...
Datasheet PDF File FDD3672_F085 PDF File

FDD3672_F085
FDD3672_F085

Overview
FDD3672_F085 N-Channel UltraFET Trench MOSFET March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ Features „ Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A „ Typ Qg(10) = 24nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ Optimized efficiency at high frequencies „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ DC/DC converters and Off-Line UPS „ Distributed Power Architectures and VRMs „ Primary Switch for 24V and 48V Systems „ High Voltage Synchronous Rectifier FDD3672_F085 Rev.
C 1 www.
fairchildsemi.
com FDD3672_F085 N-Channel UltraFET Trench MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 30oC, VGS = 10V) Pulsed EAS Single Pulse Avalanche Energy Power Dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics (Note 1) RθJC RθJA Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area Ratings 100 ±20 44 See Figure 4 73 144 0.
96 -55 to +175 1.
04 52 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking Device FDD3672 FDD3672_F085 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Off Characteristics Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current On Characteristics ID = 250μA, VGS = 0V VDS = 80V, VGS = 0V TJ = 150oC VGS = ±20V 100 - - -V -1 μA - 250 - ±100 nA VGS(th) Gate to Source Threshold Voltage rDS(on) Drain to Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250μA 234V ID = 44A, VGS= 10V - 0.
024 0.
028 Ω ID = 21A, VGS= 6V, - 0.
028 0.
047 Ω ID = 44A, VGS= 10V, TJ = 175...


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