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RJK03M1DPA

Renesas Technology
Part Number RJK03M1DPA
Manufacturer Renesas Technology
Description N Channel Power MOS FET
Published Aug 15, 2015
Detailed Description RJK03M1DPA 30V, 50A, 2.3mΩmax. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capa...
Datasheet PDF File RJK03M1DPA PDF File

RJK03M1DPA
RJK03M1DPA

Overview
RJK03M1DPA 30V, 50A, 2.
3mΩmax.
N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0765EJ0200 Rev.
2.
00 Feb 08, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25C, Rg  50  3.
Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 50 200 50 21 44.
1 45 2.
8 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C ...


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