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RJK03N6DPA

Part Number	RJK03N6DPA
Manufacturer	Renesas Technology
Description	N-Channel MOSFET
Published	Aug 15, 2015
Detailed Description	RJK03N6DPA 30V, 40A, 3.8mmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed swi...
Datasheet	RJK03N6DPA PDF File

Overview

RJK03N6DPA 30V, 40A, 3.
8mmax.
Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Preliminary Datasheet R07DS0787EJ0200 Rev.
2.
00 Feb 12, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 5 678 D DDD 4321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25C, Rg  50  3.
Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 40 160 40 14 19.
6 35 3.
57 150 –55 to +150 (Ta = 25°C) Unit V V A A A A...

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RJK03N6DPA N-Channel MOSFET - Renesas Technology

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