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FDD8N50NZ

Fairchild Semiconductor
Part Number FDD8N50NZ
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 15, 2015
Detailed Description FDD8N50NZ — N-Channel UniFETTM II MOSFET FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 mΩ Features • RDS(on)...
Datasheet PDF File FDD8N50NZ PDF File

FDD8N50NZ
FDD8N50NZ

Overview
FDD8N50NZ — N-Channel UniFETTM II MOSFET FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.
5 A, 850 mΩ Features • RDS(on) = 770 mΩ (Typ.
) @ VGS = 10 V, ID = 3.
25 A • Low Gate Charge (Typ.
14 nC) • Low Crss (Typ.
5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply November 2013 Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.
This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D G S D D-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Parameter - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD8N50NZTM 500 ±25 6.
5 3.
9 26 287 6.
5 9 10 90 0.
7 -55 to +150 300 FDD8N50NZTM 1.
4 62.
5 Unit V V A A mJ A mJ V/ns W W/oC oC oC Unit oC/W ©2010 Fairchild Semiconductor Corporation FDD8N50NZ Rev.
C1 1 www.
fairchildsemi.
com FDD8N50NZ — N-Channel UniF...


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