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RJK0659DPA

Renesas Technology
Part Number RJK0659DPA
Manufacturer Renesas Technology
Description N-Channel MOSFET
Published Aug 15, 2015
Detailed Description RJK0659DPA 60V, 30A, 8.0mΩ max. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Low...
Datasheet PDF File RJK0659DPA PDF File

RJK0659DPA
RJK0659DPA

Overview
RJK0659DPA 60V, 30A, 8.
0mΩ max.
N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0345EJ0300 Rev.
3.
00 Apr 09, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25C, Rg  50  3.
Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 60 20 30 120 30 15 16.
9 55 2.
27 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0345EJ0300 Rev.
3.
00 Apr 09, 2013 Page 1 of 6 RJK0659DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 V Gate to source leak current IGSS — — 0.
1 A VGS = 20 V, VDS = 0 V Zero gate voltage drain current IDSS — — 1 A VDS = 60 V, VGS = 0 V Gate to source cutoff voltage VGS(off) 2.
0 — 4.
0 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) — 6.
5 8.
0 m ID = 15 A, VGS = 10 V Note4 Forward transfer admittance |yfs| — 47 — S ID = 15 A, VDS = 10 V Note4 Input capacitance Output capacitance Ciss Coss — 2400 — — 550 — pF VDS = 10 V, VGS = 0 V, pF f = 1 MHz Reverse transfer capacitance Crss — 150 — pF Gate Resistance Rg — 1.
3 —  Total gate charge Gate to source charge Qg — 30.
6 — nC VDD = 25 V, VGS = 10 V, Qgs — 13 — nC ID = 30 A Gate to drain charge Qgd — 5.
1 — nC Turn-on delay time Rise time Turn-off delay time td(on) tr...


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