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NP60N04VUK

Renesas
Part Number NP60N04VUK
Manufacturer Renesas
Description N-Channel MOSFET
Published Aug 15, 2015
Detailed Description Preliminary Data Sheet NP60N04VUK MOS FIELD EFFECT TRANSISTOR R07DS0576EJ0100 Rev.1.00 Nov 24, 2011 Description The N...
Datasheet PDF File NP60N04VUK PDF File

NP60N04VUK
NP60N04VUK

Overview
Preliminary Data Sheet NP60N04VUK MOS FIELD EFFECT TRANSISTOR R07DS0576EJ0100 Rev.
1.
00 Nov 24, 2011 Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features  Super low on-state resistance RDS(on) = 3.
85 m MAX.
(VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2450 pF TYP.
(VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
NP60N04VUK-E1-AY *1 NP60N04VUK-E2-AY *1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-252 (MP-3ZP) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2 Tstg IAR EAR Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20  0 V Ratings 40 20 60 240 105 1.
2 175 –55 to 175 28 78 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.
43 °C/W 125 °C/W R07DS0576EJ0100 Rev.
1.
00 Nov 24, 2011 Page 1 of 6 NP60N04VUK Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Note: *1 Pulsed test Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss C...


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