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NP60N055VUK

Renesas
Part Number NP60N055VUK
Manufacturer Renesas
Description MOSFET
Published Aug 15, 2015
Detailed Description NP60N055VUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0588EJ0200 Rev.2.00 May 24, 2018 Description The N...
Datasheet PDF File NP60N055VUK PDF File

NP60N055VUK
NP60N055VUK

Overview
NP60N055VUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0588EJ0200 Rev.
2.
00 May 24, 2018 Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features  Super low on-state resistance RDS(on) = 5.
5 m MAX.
(VGS = 10 V, ID = 30 A)  Low Ciss: Ciss = 2500 pF TYP.
(VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
Lead Plating Packing NP60N055VUK-E1-AY *1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) NP60N055VUK-E2-AY *1 Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-252 (MP-3ZP) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 55 20 60 240 105 1.
2 175 –55 to 175 25 63 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C)*3 Rth(ch-A) *3 1.
43 125 °C/W °C/W Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20  0 V *3 Not subject of production test.
Verified by design/characterization.
R07DS0588EJ0200 Rev.
2.
00 May 24, 2018 Page 1 of 6 NP60N055VUK Electrical Characteristics (TA = 25°C) Item Symbol MIN.
TYP.
MAX.
Zero Gate Voltage Drain Current IDSS — — 1 Gate Leakage Current IGSS — — 100 Gate to Source Threshold Voltage VGS(th) 2.
0 3.
0 4.
0 Forward Transfer Admittance *1 | yfs | 22 44 — Drain to Source On-state Resistance *1 RDS(on) — 4.
6 5.
5 Input Capacitance *2 Ciss — 2500 3750 Output Capacitance *2 Coss — 260 390 Reverse Transfer Capacitance *2 Crss — 100...


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