DatasheetsPDF.com

AUIRLR3636

International Rectifier
Part Number AUIRLR3636
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Aug 15, 2015
Detailed Description AUTOMOTIVE GRADE AUIRLR3636 Features l Advanced Process Technology l Ultra Low On-Resistance l Logic Level Gate Drive ...
Datasheet PDF File AUIRLR3636 PDF File

AUIRLR3636
AUIRLR3636

Overview
AUTOMOTIVE GRADE AUIRLR3636 Features l Advanced Process Technology l Ultra Low On-Resistance l Logic Level Gate Drive l Advanced Process Technology l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
HEXFET® Power MOSFET D VDSS RDS(on) typ.
max.
ID (Silicon Limited) 60V 5.
4m: c6.
8m: 99A S ID (Package Limited) 50A D G Gate S G D-Pak AUIRLR3636 D Drain S Source Base Part Number AUIRLR3636 Package ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)