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IPS031R

International Rectifier
Part Number IPS031R
Manufacturer International Rectifier
Description FULLY PROTECTED POWER MOSFET SWITCH
Published Aug 15, 2015
Detailed Description Data Sheet No.PD60220 IPS031R FULLY PROTECTED POWER MOSFET SWITCH Features • Over temperature shutdown • Over current ...
Datasheet PDF File IPS031R PDF File

IPS031R
IPS031R

Overview
Data Sheet No.
PD60220 IPS031R FULLY PROTECTED POWER MOSFET SWITCH Features • Over temperature shutdown • Over current shutdown • Active clamp • Low current & logic level input • E.
S.
D protection Description The IPS031R are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.
These devices combine a HEXFET® POWER MOSFET and a gate driver.
They offer full protection and high reliability required in harsh environments.
The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 14A.
The device restarts once the input is cycled.
The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
Typical Connection Product Summary Rds(on) V clamp Ishutdown Ton/Toff 60mΩ (max) 50V 14A 1.
5µs Package 3-Lead D-Pak Load R in series (if needed) IN " Logic signal (Refer to lead assignment for correct pin configuration) www.
irf.
com control ! D S 1 IPS031R Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
All voltage parameters are referenced to SOURCE lead.
(TAmbient = 25oC unless otherwise specified).
PCB mounting uses the standard footprint with 70 µm copper thickness.
Symbol Vds Vin Iin, max Isd cont.
Parameter Maximum drain to source voltage Maximum input voltage Maximum IN current Diode max.
continuous current (1) rth=100oC/W Min.
— -0.
3 -10 — Max.
47 7 +10 Units V mA Test Conditions 1.
6 D-Pak Std footprint rth=5oC/W rth=50oC/W Isd pulsed Pd Diode max.
pulsed current (1) Maximum power dissipation(1) rth=50oC/W rth=100oC/W ESD1 Electrostatic discharge voltage (Human Body) ESD2 Electrostatic discharge voltage (Machine Model) T stor.
Max.
storage temperature Tj max.
Max.
junction temperature Tlead Lead temperature (sold...


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