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W5NB100

STMicroelectronics
Part Number W5NB100
Manufacturer STMicroelectronics
Description STW5NB100
Published Aug 15, 2015
Detailed Description ® TYPE STW5NB100 VDSS 1000 V STW5NB100 N - CHANNEL 1000V - 4Ω - 4.3A - TO-247 PowerMESH™ MOSFET RDS(on) < 4.4 Ω ID ...
Datasheet PDF File W5NB100 PDF File

W5NB100
W5NB100

Overview
® TYPE STW5NB100 VDSS 1000 V STW5NB100 N - CHANNEL 1000V - 4Ω - 4.
3A - TO-247 PowerMESH™ MOSFET RDS(on) < 4.
4 Ω ID 4.
3 A PRELIMINARY DATA s TYPICAL RDS(on) = 4 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR VGS ID ID Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC IDM(•) Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max.
Operating Junction Temperature (•) Pulse width limited by safe operating area June 1998 Value Unit 1000 V 1000 V ± 30 V 4.
3 A 2.
7 A 17 A 160 1.
28 W W/oC 4 -65 to 150 150 (1) ISD ≤ 4 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX V/ns oC oC 1/5 STW5NB100 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.
78 62.
5 0.
5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj m...


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