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RJK0216DPA

Part Number	RJK0216DPA
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Aug 17, 2015
Detailed Description	Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switchi...
Datasheet	RJK0216DPA PDF File

Overview

Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0208EJ0110 Rev.
1.
10 Sep 05, 2011 Applications DC-DC conversion for PC and Server.
Features  Low on-resistance  Capable of 4.
5 V gate drive  High density mounting  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D(2)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and Schottky Barrier Diode 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse...

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RJK0216DPA Silicon N Channel Power MOS FET - Renesas Technology

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