DatasheetsPDF.com

LDTC113ZWT3G

Leshan Radio Company
Part Number LDTC113ZWT3G
Manufacturer Leshan Radio Company
Description Bias Resistor Transistor
Published Aug 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTC113ZWT3G PDF File

LDTC113ZWT3G
LDTC113ZWT3G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC113ZWT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature VCC VIN IO IC(Max.
) PD Tj Tstg Limits LDTC113ZWT1G 50 −5 to +10 100 100 200 150 −55 to +150 Unit V V mA mW °C °C 3 1 2 SOT–323 (SC–70) 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC113ZWT1G LDTC113ZWT3G N7 N7 1 10 3000/Tape & Reel 1 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗ Characteristics of built-in transistor Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗ Min.
− 3 − − − 33 0.
7 8 − Typ.
− − 0.
1 − − − 1 10 250 Max.
0.
3 − 0.
3 7.
2 0.
5 − 1.
3 12 − Unit V V mA µA − kΩ − MHz Conditions VCC=5V, IO=100µA VO=0.
3V, IO=20mA IO/II=10mA/0.
5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA − − VCE=10V, IE= −5mA, f=100MHz 1/3 z Electrical characteristic curves INPUT VOLTAGE : VI (on) (V) 100 VO=0.
3V 50 20 10 5 Ta=−40°C 2 25°C 100°C 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.
1 Input voltage vs.
output current (ON characteristics) OUTPUT...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)