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LDTC114TWT3G

Leshan Radio Company
Part Number LDTC114TWT3G
Manufacturer Leshan Radio Company
Description Bias Resistor Transistor
Published Aug 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTC114TWT3G PDF File

LDTC114TWT3G
LDTC114TWT3G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC114TWT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 50 50 5 100 200 150 −55 to +150 Unit V V V mA mW °C °C 3 1 2 SOT–323 (SC–70) 1 BASE R1 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC114TWT1G 8E 10 - 3000/Tape & Reel LDTC114TWT3G 8E 10 - 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT ∗ Min.
50 50 5 − − − 100 7 − Typ.
− − − − − − 250 10 250 Max.
− − − 0.
5 0.
5 0.
3 600 13 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=10mA/1mA VCE=5V, IC=1mA − VCE=10V, IE=−5mA, f=100MHz 1/3 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 1k VCE=5V 500 200 100 Ta=100°C 25°C 5...


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