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LDTC144TWT1G

Leshan Radio Company
Part Number LDTC144TWT1G
Manufacturer Leshan Radio Company
Description Bias Resistor Transistor
Published Aug 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTC144TWT1G PDF File

LDTC144TWT1G
LDTC144TWT1G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC144TWT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 150 −55 to +150 3 1 2 SOT–323 (SC–70) 1 BASE R1 R2 Unit V V mA mW °C °C 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC144TWT1G 8T 47 - 3000/Tape & Reel LDTC144TWT3G 8T 47 - 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Collector-base breakdown voltage BVCBO 50 Collector-emitter breakdown voltage BVCEO 50 Emitter-base breakdown voltage BVEBO 5 Collector cutoff current ICBO − Emitter cutoff current IEBO − Collector-emitter saturation voltage VCE(sat) − DC current transfer ratio hFE 100 Input resistance R1 32.
9 Transition frequency fT ∗ − ∗ Characteristics of built-in transistor Typ.
− − − − − − 250 47 250 Max.
− − − 0.
5 0.
5 0.
3 600 61.
1 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=5mA/0.
5mA VCE=5V, IC=1mA − VCE=10V, IE= −5mA, f=100MHz 1/3 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 1k VCE=5...


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