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LDTC115GWT1G

LRC
Part Number LDTC115GWT1G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor...
Datasheet PDF File LDTC115GWT1G PDF File

LDTC115GWT1G
LDTC115GWT1G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltag Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 150 −55 to +150 Unit V V V mA mW °C °C LDTC115GWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC115GWT1G L2 100 3000/Tape & Reel LDTC115GWT3G L2 100 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltag Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Characteristics of built-in transistor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT ∗ Min.
50 50 5 − 30 − 82 70 − Typ.
− − − − − − − 100 250 Max.
− − − 0.
5 58 0.
3 − 130 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=72µA VCB=50V VEB=4V IC=5mA, IB=0.
25mA IC=5mA, VCE=5V − VCE=10V, IE=−5mA, f=100MHz 1/3 OUTPUT CURRENT : lo COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) LESHAN RADIO COMPANY, LTD.
z Electrical characteristic curves 1k 500 VC...


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