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LDTA123EWT3G

LRC
Part Number LDTA123EWT3G
Manufacturer LRC
Description Bias Resistor Transistor
Published Aug 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor ...
Datasheet PDF File LDTA123EWT3G PDF File

LDTA123EWT3G
LDTA123EWT3G

Overview
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Symbol VCC Input voltage VIN Output current IO IC(Max.
) Power dissipation PD Junction temperature Tj Storage temperature Tstg Limits −50 −12 to +10 −100 −100 200 150 −55 to +150 Unit V V mA mA mW °C °C LDTA123EWT1G 3 1 2 SOT–323 (SC–70) 1 BASE R1 R2 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA123EWT1G 6H 2.
2 2.
2 3000/Tape & Reel LDTA123EWT3G 6H 2.
2 2.
2 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗ Characteristics of built-in transistor Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗ Min.
− −3 − − − 20 1.
54 0.
8 − Typ.
− − −0.
1 − − − 2.
2 1 250 Max.
−0.
5 − −0.
3 −3.
8 −0.
5 − 2.
86 1.
2 − Unit V V mA µA − kΩ − MHz Conditions VCC=−5V, IO=−100µA VO=−0.
3V, IO=−20mA IO/II=−10mA/−0.
5mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−20mA − − VCE=−10V, IE=5mA, f=100MHz 1/3 LESHAN RADIO COMPANY, LTD.
LDTA123EWT1G INPUT VOLTAGE : VI(on) (V) zElectrical characteristic curves 100 VO=−0.
3V 50 20 10 Ta=−40°C 5 25°C 100°C 2 1 500m 200m 100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : I...


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